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this is information on a product in full production. july 2014 docid025975 rev 2 1/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 n-channel 650 v, 0.79 ? typ., 5 a mdmesh m2 power mosfets in dpak, to-220fp, to-220 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using the mdmesh? m2 technology. thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. they are therefore suitable for the most demanding high efficiency converters. to-220fp 1 2 3 1 3 tab dpak to-220 3 2 1 tab ipak 1 2 3 tab am15572v1 , tab order codes v ds r ds(on) max i d std9n65m2 650 v 0.9 ? 5 a stf9n65m2 STP9N65M2 stu9n65m2 table 1. device summary order codes marking package packaging std9n65m2 9n65m2 dpak tape and reel stf9n65m2 to-220fp tube STP9N65M2 to-220 stu9n65m2 ipak www.st.com
contents std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 2/23 docid025975 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dpak, std9n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220fp, stf9n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-220, STP9N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 ipak, stu9n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid025975 rev 2 3/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak, to-220, ipak to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 5 5 (1) 1. current limited by package. a i d drain current (continuous) at t c = 100 c 3.2 3.2 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 60 20 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 5 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 520 v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit dpak to-220fp to-220 ipak r thj-case thermal resistance junction-case max 2.08 6.25 2.08 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb max 50 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 105 mj
electrical characteristics std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 4/23 docid025975 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.5 a 0.79 0.9 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -315-pf c oss output capacitance - 18 - pf c rss reverse transfer capacitance -1-pf c oss eq (1) 1. coss eq. is defined as a constant equivalent capacitance giving the same charging time as coss when vds increases from 0 to 80% vdss equivalent output capacitance v gs = 0, v ds = 0 to 520 v - 109 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.6 - ? q g total gate charge v dd = 520 v, i d = 5 a, v gs = 10 v (see figure 19 ) -10-nc q gs gate-source charge - 2.5 - nc q gd gate-drain charge - 5 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 2.5 a, r g = 4.7 , v gs = 10 v (see figure 18 and figure 23 ) -7.5-ns t r rise time - 6.6 - ns t d(off) turn-off delay time - 22.5 - ns t f fall time - 18 - ns
docid025975 rev 2 5/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 electrical characteristics 23 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 20 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0, i sd = 5 a - 1.6 v t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v (see figure 20 ) - 276 ns q rr reverse recovery charge - 1.7 c i rrm reverse recovery current - 12.5 a t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 20 ) - 312 ns q rr reverse recovery charge - 1.9 c i rrm reverse recovery current - 12.4 a
electrical characteristics std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 6/23 docid025975 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.01 tj=150c tc=25c single pulse 10ms 100 am18058v1 i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.01 tj=150c tc=25c single pulse 10ms 100 am18056v1 figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 1ms 100 s 0.01 tj=150c tc=25c single pulse 10ms 100 am18057v1
docid025975 rev 2 7/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 electrical characteristics 23 figure 8. output characteristics figure 9. transfer characteristics i d 10 6 2 0 0 5 v ds (v) 10 (a) 15 4v 5v v gs =8, 9, 10v 4 8 12 20 6v 7v 25 30 am18059v1 i d 6 4 2 0 0 4 v gs (v) 8 (a) 2 6 8 v ds =20v 10 am18060v1 figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance v gs 6 4 2 0 0 4 q g (nc) (v) 8 6 8 10 v dd =520v i d =5a 300 200 100 0 400 500 v ds 2 10 v ds (v) am18061v1 r ds(on) 0.780 0.770 0.760 0 2 i d (a) ( ) 1 3 0.790 v gs =10v 4 5 0.800 0.810 0.820 0.830 am18062v1 figure 12. capacitance variations figure 13. output capacitance stored energy c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am18063v1 e oss 1 0.5 0 0 100 v ds (v) ( j) 400 200 300 1.5 500 600 2 2.5 am18064v1
electrical characteristics std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 8/23 docid025975 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized v (br)dss vs temperature v gs(th) 1.0 0.9 0.8 0.7 -50 0 t j (c) (norm) -25 1.1 75 25 50 100 i d =250 a am18065v1 r ds(on) 1.9 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 2.3 i d =2.5a v gs =10v am18066v1 v sd 2 i sd (a) (v) 1 3 4 0.5 0.6 0.7 t j =-50c t j =150c t j =25c 0.8 0.9 1 am18068v1 v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.91 0.93 0.95 0.97 0.99 1.01 1.03 1.05 i d =1ma 1.07 1.09 1.11 am18067v1
docid025975 rev 2 9/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 test circuits 23 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 10/23 docid025975 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid025975 rev 2 11/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 package mechanical data 23 4.1 dpak, std9n65m2 figure 24. dpak (to-252) type a drawing b3
package mechanical data std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 12/23 docid025975 rev 2 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 l1 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid025975 rev 2 13/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 package mechanical data 23 figure 25. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters )3b3
package mechanical data std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 14/23 docid025975 rev 2 4.2 to-220fp, stf9n65m2 figure 26. to-220fp drawing 7012510_rev_k_b
docid025975 rev 2 15/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 package mechanical data 23 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
package mechanical data std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 16/23 docid025975 rev 2 4.3 to-220, STP9N65M2 figure 27. to-220 type a drawing bw\sh$b5hyb7
docid025975 rev 2 17/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 package mechanical data 23 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 18/23 docid025975 rev 2 4.4 ipak, stu9n65m2 figure 28. ipak (to-251) drawing 0068771_l
docid025975 rev 2 19/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 package mechanical data 23 table 12. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
packaging mechanical data std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 20/23 docid025975 rev 2 5 packaging mechanical data figure 29. tape for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid025975 rev 2 21/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 packaging mechanical data 23 figure 30. reel for dpak (to-252) table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 22/23 docid025975 rev 2 6 revision history table 14. document revision history date revision changes 24-feb-2014 1 first release. 15-jul-2014 2 ? modified: title, features and description ? modified: figure 5 and 15 ? updated: figure 28 and table 12 ? minor text changes
docid025975 rev 2 23/23 std9n65m2, stf9n65m2, STP9N65M2, stu9n65m2 23 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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